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BUZ71

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BUZ71

N - CHANNEL 50V - 0.085Ω - 17A TO-220
STripFET POWER MOSFET
T YPE
BUZ71
■
■
■
■
■
V DSS
R DS(on)
ID
50 V
< 0.1 Ω
17 A
TYPICAL RDS(on) = 0.085 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
3
1
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
2
TO-220
■
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Value
Un it
Drain-source Voltage (VGS = 0)
Parameter
50
V
Drain- gate Voltage (R GS = 20 kΩ)
50
V
± 20
V
G ate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
17
A
IDM
Drain Current (pulsed)
68
A
P tot
Ts tg
Tj
o
T otal Dissipation at Tc = 25 C
Storage Temperature
Max. Operating Junction Temperature
DIN HUMIDITY CAT EGORY (DIN 40040)
IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
60
W
-65 to 175
o
C
175
o
C
E
55/150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
1/8
BUZ71
THERMAL DATA
R thj -case
R thj -amb
Thermal Resistance Junction-case
2.5
o
C/W
62.5
o
C/W
Max
Thermal Resistance Junction-ambient
Max
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Valu e
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
17
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 25 V)
50
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
50
Unit
V
Tj = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
ID = 1 mA
V GS = 10 V
Min.
2.1
Typ.
3
4
V
0.085
0.1
Ω
Min.
Typ.
Max.
Unit
4
7.7
S
760
100
30
pF
pF
pF
ID = 9 A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
Parameter
Test Con ditions
Forward
Transconductance
V DS = 25 V
ID = 9 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
V GS = 0
SWITCHING
Symbo l
t d(on)
tr
t d(of f)
tf
2/8
Parameter
Turn-on Time
Rise Time
Turn-off Delay T ime
Fall T ime
Test Con ditions
V DD = 30 V
R GS = 50 Ω
ID = 8 A
V GS = 10 V
Min.
Typ.
20
65
70
35
Max.
Unit
ns
ns
ns
ns
BUZ71
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbo l
ISD
Parameter
Test Con ditions
I SDM
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 28 A
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 14 A di/dt = 100 A/µs
V DD = 30 V T j = 150 o C
t rr
Q rr
Min.
Typ.
V GS = 0
Max.
Unit
17
68
A
A
1.8
V
65
ns
0.17
µC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
3/8
BUZ71
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
BUZ71
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
BUZ71
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
BUZ71
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/8
BUZ71
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
8/8
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